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An extended component-based reliability model for protective systems to determine routine test schedule
Reliability protective system routine test redundancy
2011/3/23
This paper presents a novel approach for evaluating the reliability of protective systems taking into account its components reliability. In this paper, a previously proposed extended model is used fo...
Determination of autoregressive model orders for seizure detection
EEG seizure AR model stepwise least square algorithm
2010/10/12
In the present study, a step-wise least square estimation algorithm (SLSA), implemented in a Matlab package called as ARfit, has been newly applied to clinical data for estimation of the accurate Auto...
Development of a magnetic field model and insertion~into a commercial electromagnetic simulator
magnetic field model insertion commercial electromagnetic simulator
2010/1/11
To take into account~certain ElectroMagnetic Compatibility (EMC) aspects~and especially to evaluate the magnetic fields radiated by electronic components, different radiated emission models have been ...
PARADOX OF VON ENGEL-STEENBECK AND CHANNEL MODEL OF THE ELECTRIC ARC
plasma temperature channel
2009/10/13
It is offered concerning simple algorithm with which help it is possible to estimate thermal streams, average temperature and temperature profile in the channel of the electroarc plasma generator, and...
QUASI-EQUILIBRIUM CHANNEL MODEL OF AN ARC OF A CONSTANT CURRENT
low-temperature plasma constant current plasma generators two-temperature model
2009/10/13
The rather simple method of calculation of electronic and gas temperature in the channel of arc of plasma generator is offered. This method enters in frameworks of self-consistent two-temperature chan...
A New-Trend Model-Based to Solve the Peak Power Problems in OFDM Systems
New-Trend Model-Based Peak Power Problems OFDM Systems
2009/9/4
The high peak to average power ration (PAR) levels of orthogonal frequency division multiplexing (OFDM) signals attract the attention of many researchers during the past decade. Existing approaches th...
Statistical Model of Hot-Carrier Degradation and Lifetime Prediction for P-MOS Transistors
Hot-carrier P-MOS transistor lifetime prediction
2009/7/28
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
An Iterative Decomposed Piecewise-Linear Model Description
An Iterative Decomposed Piecewise-Linear Model the PWL characteristic
2010/12/3
A model description for the representation of one-dimensional piecewise-linear characteristics is presented. The model can be denoted as a decomposed one, because the independent and dependent variabl...
Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model
Power MOSFET RDs Numerical simulation Physicals parameters
2010/12/8
In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor ...
Accurate Single-Section Model of Mosfet Including Substrate Resistivity
Mosfet Substrate Resistivity
2010/12/16
Practical MOSFETS fabricated on low and moderately doped substrates depart
considerably from the idealized two-port model because of the control properties
of the substrate terminal. Therefore, the ...
Voltage Degradation Model of Thin Film Capacitors
Voltage Degradation Model Thin Film Capacitors
2010/12/23
A degradation model of thin film capacitors is presented. This model takes into consideration that: (a) the damage rate dD/dt is a function of the damage value D, and (b) the critical damage Dc is a f...