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基于两光子宇称门接近确定性的制备偏振Cluster态
交叉克尔非线性 量子非破坏测量 Cluster态
2013/9/15
基于弱的交叉克尔效应和线性光学元件,利用光子偏振宇称门呈现了一个关于制备Cluster态的方案.本方案引入了交叉克尔非线性介质,采用了对相干探测模的非破坏测量,有效实现了光子与光子间的相互作用,进而获得所期望的光子纠缠态,同时可以提高制备的成功概率和制备态的保真度.通过本方案可以制备接近完美保真度的四光子偏振Cluster态,并具有接近1的成功概率.在本方案的基础上通过利用线性光学元件还可以获得3...
A Small Cluster Approach for the Electronic Density of States in Amorphous Germanium
Electronic density of states amorphous germanium bonding orbitals Born model
2010/12/10
The electronic density of states for very small clusters of amorphous germanium is calculated by using bonding orbitals. In this context, the Born model is considered as well as Pauling-type hybridize...
On Cluster Calculation for Amorphous Tetrahedrally Bonded Semiconductors
Cluster Calculation Amorphous Tetrahedrally Bonded Semiconductors
2010/12/10
This article consists of an approach to the calculation of the density of valence states in tetrahedrally bonded amorphous semiconductors and, on the other hand, the paper contains theoretical conside...
A New Mathematical Model for Cluster Calculation in Tetrahedrally Bonded Amorphous Semiconductors
Cluster Calculation Bonded Amorphous Semiconductors
2010/12/15
Tetrahedraily bonded amorphous semiconductors exhibit a structure suitable for applying the so-called extended Hückel theory (EHT) to determine the electronic density of states by means of the cluster...