搜索结果: 1-15 共查到“光电子技术 InP”相关记录42条 . 查询时间(0.062 秒)
Small-Form-Factor All-InP Integrated Laser Vector Modulator Enables the Generation and Transmission of 256-Gb/s PDM-16QAM Modulation Format
Small-Form-Factor All-InP Integrated Laser Vector Modulator Enables the Generation Transmission of 256-Gb/s PDM-16 QAM Modulation Format
2014/11/6
We demonstrate, using a compact InP-based integrated assembly of a tunable laser and a double-nested Mach-Zehnder modulator, generation of Nyquist-prefiltered QPSK and 16-QAM signals at 32-Gbaud. We t...
用于光子计数的InGaAs/InP SPAD设计
InGaAs/InP 单光子雪崩二极管 雪崩宽度 工作温度 电场分布
2016/8/10
重点研究了InGaAs/InP SPAD的隧道贯穿电场、雪崩击穿电场、雪崩宽度与过偏电压的关系,提出了过偏电压的计算方法.分析了InGaAs/InP SPAD的基本特性即探测效率、暗计数率与其过偏电压、工作温度、量子效率、电场分布的依赖关系,提出了一种单光子InGaAs雪崩二极管的设计方法.设计制作了InGaAs/InP SPAD,并在门控淬灭模式下进行了单光子探测实验.结果表明:对于Φ200μm...
InP基1×4多模干涉耦合器的设计与制作
多模干涉耦合器 强限制波导 束传播方法
2012/12/12
在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀...
在有效质量近似下，利用变分法对GaxIn1-xAsyP1-y /InP阶梯量子阱中氢施主杂质束缚能进行了理论计算，并研究了外加电场和阶梯阱的高度对阶梯量子阱中氢施主杂质电子态特性的影响。计算结果显示当施主杂质位于阶梯量子阱的中心时，束缚能达到最大值；外加电场使得电子波函数从阱中心偏移，引起束缚能的非对称分布；Ga 与 As组分的变化使得阶梯阱的势能高度发生变化，从而明显的影响阱中氢杂质束缚能。计算...
Polarization Multiplexed (D)QPSK InP Receiver Photonic Integrated Circuits
Photonic integrated circuits Fiber optics communications Optoelectronics
2015/5/26
In this paper we review recent developments in the area of receiver photonic integrated circuits for the implementation of polarization multiplexed (differentially coded), quadrature phase shift keyin...
Single-mode 1.52 μm InAs/InP quantum dot DFB lasers
Quantum devices Lasers distributed-feedback
2015/5/25
Single-mode InAs/InP quantum dot DFB lasers with side-mode suppression ratio greater than 62 dB are demonstrated, operating CW up to 80°C. Relative intensity noise was less than -153 dB/Hz from 1 MHz ...
437 GHz Optical Pulse Train Generation from a C-Band InAs/InP Quantum Dot Laser
Lasers pulsed Quantum-wel dot devices
2015/5/22
We demonstrate 437 GHz optical pulse train generation based on grating coupled external cavities using InAs/InP quantum dots as the gain material. It is the highest repetition rate ever produced by QD...
1x8 InP Optical Phased-Array Switch with Integrated Inline Power Monitors
Optical switching devices Integrated optics devices
2015/5/22
Monolithic InP 1x8 optical switch with inline power monitor array is demonstrated.On-chip optimization of the switch is achieved using the feedback signal from power monitors,paving the way to constru...
10-Gb/s - 80-km operation of full C-band InP MZ modulator with linear-accelerator-type tiny in-line centipede electrode structure directly driven by logic IC of 90-nm CMOS process
Waveguide modulators Traveling-wave devices
2015/5/21
InP MZ modulator of sub 1-V pp driving voltage with quasi-traveling-wave electrode structure and Logic IC of 90-nm CMOS process as its driver were developed. Their applicability was demonstrated throu...
Compact InGaAsP/InP Flattened Ring Lasers with Etched Beam Splitters
Resonators Photonic integrated circuits
2015/5/21
We present results from novel compact InGaAsP/InP based flattened micro-ring resonators and lasers. Resonators with circumferences 30-300μm by using etched beam-splitters (EBS) are demonstrated. EBS c...
10 Channel, 100Gbit/s per Channel, Dual Polarization, Coherent QPSK, Monolithic InP Receiver Photonic Integrated Circuit
10 Channel 100Gbit/s per Channel Dual Polarization Coherent QPSK Monolithic InP Receiver Photonic Integrated Circuit
2015/5/20
A 10 channel, dual polarization, monolithically integrated, coherent QPSK receiver on InP operating at 100Gbit/s per channel is demonstrated.
Manufacturable Monolithically Integrated InP Dual-Port Coherent Receiver for 100G PDM-QPSK Applications
Manufacturable Monolithically Integrated InP Dual-Port Coherent Receiver 100G PDM-QPSK Applications
2015/5/20
We developed a single-chip InP coherent receiver for detection of PDM-QPSK signals,which meets specifications for 100G between 1530 and 1570 nm. Integration includes a mode converter for efficient cou...
基于器件模拟仿真，设计了一种ＰＮＰ 型１．５μｍ 波长多量子阱ＩｎＧａＡｓＰＩｎＰ 异质结晶体
管激光器材料外延结构，并采用金属有机化学气相沉积外延生长．其中基区采用Ｎ 型Ｓｉ掺杂．因为
扩散系数小，比较Ｐ型Ｚｎ搀杂具有较高的稳定性，因而较ＮＰＮ 结构外延材料容易获得高质量的
光学有源区．由于Ｎ 型欧姆接触比Ｐ型容易获得，基区搀杂浓度可以相对较低，有利于减小基区光
损耗和载流子复合，从而...
Full C-band 40-Gbit/s DPSK Tunable Transmitter Module Developed by Hybrid Integration of Tunable Laser and InP n-p-i-n Mach-Zehnder Modulator
Modulators Integrated optics devices
2015/6/10
A 40-Gbaud tunable transmitter module was developed for the first time by the hybrid integration of a full C-band tunable laser and an InP Mach-Zehnder modulator. Wavelength-tunable chirpless 40-Gbit/...
InP-based photonic integrated circuits are key devices for constructing photonic networks with low cost, low power consumption and small footprint. Many types of components are required to span variou...