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Measuring the topological charge of vortex beams by using an annular ellipse aperture
Measuring the topological charge vortex beams an annular ellipse aperture
2013/7/3
We theoretically and experimentally investigate the Fraunhofer diffraction pattern of a vortex beam passing through an annular ellipse aperture. It is found that the pat-tern of the far-field diffract...
Detecting the topological charge of vortex beams using an annular triangle aperture
Vortex beam Topological charge Annular triangle aperture
2013/7/3
The Fraunhofer diffraction pattern of a vortex beam by an annular triangle aperture is analyzed theoretically and experimentally. It is found that the pattern of the far-field diffraction intensity di...
Electrodynamic Response of the Charge Ordering Phase: Dielectric and Optical Studies of alpha-(BEDT-TTF)2I3
Electrodynamic Response of the Charge Ordering Phase Dielectric Optical Studies
2010/11/25
We report on the anisotropic response, the charge and lattice dynamics of normal and hargeordered phases with horizontal stripes in single crystals of the organic conductor -(BEDT-TTF)2I3 determined ...
Measuring the Topological Charge of Integer and Fraction Vortices Using Multipoint Plates
vortex beams multipoint plates interference
2013/7/3
The topological charge of integral vortex beams with a single circle of multipoints has previously been measured. In this work, we theoretically and experimental study the diffraction patterns of vort...
Beam-spreading and topological charge of vortex beams propagating in a turbulent atmosphere
Vortex beams Turbulent atmosphere Beam-spreading Orbital angular momentum
2013/7/3
We theoretically and experimentally investigate the beam-spreading of a vortex beam propagating in a turbulent atmosphere. It is found that the vortex beam is less affected by turbulence than a non-vo...
期刊信息
篇名
Optically Activated Charge Domain Model for High-gain GaAs Photoconductive
语种
英文
撰写或编译
撰写
作者
施卫
第一作者单位
西安理工大学
刊物名称
半导体学报 （EI收录）
页面
出版日期
2001年
月
日
文章标识(ISSN)
0253-4177
相关项目
大功率超短电脉冲（ps）光电导开关微波源...
Light Emission From Travelling Space Charge Domains
Light Emission Travelling Space Charge Domains
2010/4/16
We report light emission from n-doped GaAs epilayers associated with impact ionization when the device is biased in the negative difference resistance (NDR) regime (F > 3.5 kV cm-1). Spectral distribu...
Ionizing Radiations and Annealing Influence on MOSFET Charge States
Annealing Influence Ionizing Radiations MOSFET Charge States
2010/4/16
The threshold voltage shift D VT and its components due to trapped-oxide charges D VNot and Si-SiO2 interface traps D VN in MOSFET exposed to Bremsstrahlung, Co60 irradiation and annealing were studie...