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Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
InP HBT LNA Modelling Transistor Small-signal modelling
2014/12/8
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
Current View of Large Scale Photonic Integrated Circuits on Indium Phosphide
Current View Large Scale Photonic Integrated Circuits Indium Phosphide
2015/6/10
We report on the current state of large-scale and high functionality photonic integrated circuits on the InP platform for transmitters, receivers, and other device applications.
Large Scale Integration of Photonic Integrated Circuits on Indium Phosphide and High-Index-Contrast Si Platforms
Large Scale Integration Photonic Integrated Circuits Indium Phosphide High-Index-Contrast Si Platforms
2015/7/14
We report on development of large-scale and high functionality photonic integrated circuits on InP and Si platforms for transmitter, receiver, filtering and routing applications and discuss the merits...