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Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation
GaN Light-Emitting Diode (LED) Al2O3 PEALD Passivation Double Dielectric Stack Layer
2013/1/30
SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the...