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p-i-n InP/In0.53Ga0.47As/InP探测器结构优化
InGaAs/InP 近红外光探测器 暗电流 光响应 瞬态响应
2016/11/11
利用半导体仿真工具Silvaco对p-i-n InP/In0.53Ga0.47As/InP近红外光探测器进行优化仿真.参考实际器件对红外探测器进行建模,并将其暗电流、光谱响应仿真结果与实验结果进行拟合,保证仿真结果的有效性.以减小探测器的暗电流为目的,优化其结构.针对探测器吸收层厚度和吸收层掺杂浓度对暗电流、光响应的影响进行研究,发现当吸收层厚度大于0.3μm后,暗电流不再上升,但光响应随着吸收层...
Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
Hall sensors magnetoresistors InGaAs/InP heterostructures electronic transport geometric correction factor molecular beam epitaxy (MBE)
2011/4/27
In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric cor...