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Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...
Characterization of PbTe p-n+ Junction Grown by Molecular Beam Epitaxy
PbTe p-n+ Junction Molecular Beam Epitaxy
2010/10/22
In this work we investigate the electrical properties of PbTe p ¡ n+ junction. Mesa diodes were fabricated from p ¡ n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy....