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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
Field-induced water electrolysis switches oxide semiconductor
2010/11/23
Water is composed of two strong electro-chemically active agents, H+ and OH– ions,for oxide semiconductors though water has never been utilized as an active electronic material. Here we demonstrate th...