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Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers
SOI pseudo-MOS transistor total dose radiation ion implantation
2009/9/17
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presen...
本实验给出了用加固的和未加固的全耗尽SIMOX SOI材料制备的pseudo-MOS晶体管的总剂量辐射实验结果。在高达1M 拉德（硅）的辐射剂量下，加固技术使晶体管的阈值电压漂移从-115.5V减小到-1.9V。计算了埋氧层俘获的净正电荷的质心位置、埋氧层的空穴陷阱浓度及其空穴俘获分数，结果表明采用该技术加固的全耗尽SIMOX SOI材料具有优秀的抗总剂量辐射能力。
Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide
silicon on insulator total-dose irradiation effect H gate subthreshold charge separation photoluminescence
2009/7/31
In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/ SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on
the ...