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Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
Strain determination Si channel field effect transistor
2010/11/24
SiGe islands are used to induce tensile strain in the Si channel of Field E ect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray di raction experime...